| abstract |
A method of forming a ternary compound titanium aluminum nitride material on a substrate surface, using a plasma enhanced atomic layer deposition process to expose the substrate to a titanium precursor gas and nitrogen plasma to form titanium nitride on the substrate; The titanium nitride layer is exposed to plasma and processed, the alumina precursor gas is exposed on the titanium nitride layer, and an aluminum layer is deposited by a vapor deposition process, the plasma enhanced atomic layer deposition process, and the processing process And a vapor deposition process are repeated to form a titanium aluminum nitride layer from the titanium nitride layer and the aluminum layer. |