Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
filingDate |
2009-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2012502480-A |
titleOfInvention |
Shared mask for X-rays and shared mask for Y-lines for the manufacture of 3D memory arrays |
abstract |
A structure and method for manufacturing a three-dimensional memory using fewer bit line masks than the number of device layers is disclosed. A first bit line mask is used to form the first bit line layer at the first device level. The first bit line layer includes a plurality of first bit lines. The first bit line mask is also used to form the second bit line layer at the second device level. The second bit line layer includes a plurality of second bit lines. The first bit line and the second bit line have different electrical connections to the bit line connection level, despite using the same mask pattern. |
priorityDate |
2008-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |