| abstract |
Provided is a semiconductor device which is miniaturized while suppressing a short channel effect and has low power consumption. A semiconductor substrate having a trench and a pair of low resistance regions formed across the trench, a first gate insulating film on the semiconductor substrate, and the trench overlap with the first gate insulating film A gate electrode, a second gate insulating film provided so as to cover the gate electrode, a pair of electrodes provided on the second gate insulating film with the groove therebetween, a semiconductor film in contact with the pair of electrodes, A stacked transistor in which one of a pair of low resistance regions and one of a pair of electrodes are electrically connected to each other, one is a transistor made of an n-type semiconductor, and the other is a p-type semiconductor A complementary MOS circuit is formed by forming the transistor with the transistors. [Selection] Figure 1 |