| abstract |
An improved copper plating method for copper plating of a doped semiconductor wafer having a front current track formed thereon is provided. A semiconductor including a front surface, a back surface and a PN junction is provided, the front surface including a pattern of conductive tracks including a lower layer, and the back surface includes a metal contact; the semiconductor is a monovalent copper plating composition As well as copper on the lower layer of the conductive track. [Selection figure] None |