| abstract |
Even when a wire is a Cu wire, metal splash due to an impact during bonding is suppressed. A semiconductor device includes a semiconductor chip having an electrode pad 103 and a wire (for example, a Cu wire 105) bonded to the electrode pad 103. In the electrode pad 103, at least the surface layer of the region where the wire is bonded is made of ruthenium or ruthenium oxide, and the film thickness of the surface layer is 20 nm or more. [Selection] Figure 1 |