| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a823128890525e2ffeb3f279134c2c68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd192c45aef2128b8200be6d3d457943
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf9bcfd30865d5f59a4dd89e6738c796 |
| publicationDate |
2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012216794-A |
| titleOfInvention |
Method for forming oxide semiconductor film and method for manufacturing semiconductor device |
| abstract |
A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. Further, a method for manufacturing a semiconductor device having favorable electric characteristics by using the oxide semiconductor film is provided. An oxide semiconductor film is formed, a hydrogen permeable film provided in contact with the oxide semiconductor film is formed, a hydrogen trapping film provided in contact with the hydrogen permeable film is formed, and heat treatment is performed. This is a method for forming an oxide semiconductor film in which hydrogen is eliminated from the oxide semiconductor film. Further, a method for manufacturing a semiconductor device manufactured using the formation method is provided. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9246012-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021045504-A1 |
| priorityDate |
2011-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |