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publicationDate 2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012216742-A
titleOfInvention Multi-wavelength semiconductor laser device
abstract Provided is a multi-wavelength semiconductor laser device capable of reducing the variation in reflectance with respect to a change in wavelength and suppressing a change in temperature of a monitor current in each wavelength device while suppressing the occurrence of end face deterioration. A rear end face film is provided on the rear end face of the edge emitting type two-wavelength semiconductor laser device. The rear end face film 40 is composed of N pairs (N ≧ 2) in which a combination of a low refractive index layer having a refractive index n 1 and a high refractive index layer having a refractive index n 3 (n 1 <n 3 ) is one set. The stacked layers and an intermediate refractive index layer having a refractive index of n 2 (n 1 <n 2 <n 3 ) are included in this order from the rear end face side. The optical film thicknesses of the low refractive index layer, high refractive index layer, and intermediate refractive index layer are as follows when the wavelength between λ 1 and λ 2 is λ 3 when a base layer is not provided on the rear end face: , and has a λ 3/4. [Selection] Figure 1
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