http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012202722-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aac831a6be8de686431c615fcce2d8ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3675c4129371bd9fda5228efc4faf364 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-354 |
filingDate | 2011-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d8e2d2d7250c08985703a3821920b00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7575a53c13649841371705a1a8f9f442 |
publicationDate | 2012-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012202722-A |
titleOfInvention | MOS transistor integrated circuit and MOS transistor deterioration degree simulation calculation system |
abstract | In a ring oscillator in a MOS transistor integrated circuit, when the period of use becomes longer, the characteristics of the MOS transistor constituting the ring oscillator deteriorate, and the oscillation period becomes longer. Accordingly, it is necessary to quantitatively grasp the degree of deterioration, but there has been no conventional technique for calculating the degree of deterioration of a MOS transistor for each individual integrated circuit. In a MOS transistor integrated circuit 1 in which a ring oscillator 2 is integrated, a ring oscillator 4 configured to cause only deterioration of an NMOS transistor and a ring oscillator 5 configured to generate only deterioration of a PMOS transistor are formed. Based on the current oscillation period or the initial oscillation period of manufacture, the simulated calculation device 7 calculates the increased delay time and the oscillation period due to deterioration. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017118414-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112834890-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10969420-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104101823-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112834890-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10445206-B2 |
priorityDate | 2011-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.