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filingDate 2012-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012199525-A
titleOfInvention Semiconductor device
abstract A semiconductor device having favorable switching characteristics while reducing the size of a transistor is provided. A gate electrode having a pair of first protrusions and a second protrusion provided between the pair of first protrusions, a gate insulating film covering the gate electrode, and in contact with the gate insulating film; And a pair of first protrusions and a second protrusion overlapping the semiconductor film, and a pair of electrodes in contact with the semiconductor film and overlapping the pair of first protrusions. The semiconductor film is outside the top surfaces of the pair of first protrusions in the channel width direction of the semiconductor film, and the side edges of the pair of electrodes are outside the top surfaces of the pair of first protrusions in the channel width direction of the semiconductor film. This is a semiconductor device. [Selection] Figure 1
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