http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012199271-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c95fb7bf621b69f7df810b570b4f5533
publicationDate 2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012199271-A
titleOfInvention Manufacturing method of semiconductor device
abstract An object of the present invention is to provide a method of manufacturing a semiconductor device capable of preventing mutual diffusion of a low melting point metal and Si of a Si substrate on the back surface of the Si substrate while forming a silicide layer on the surface of the Si substrate. And A method of manufacturing a semiconductor device according to the present invention includes a step of forming a low melting point metal on the back surface of a Si substrate, a step of forming a refractory metal layer on the surface of the Si substrate, and the refractory metal. Forming a laser absorption layer on the layer; and irradiating the laser absorption layer with laser light to lower the temperature of the low melting point metal so as to prevent mutual diffusion between the low melting point metal and Si of the Si substrate. A step of forming a silicide layer at an interface between the laser absorption layer and the refractory metal layer and an interface between the refractory metal layer and the Si substrate, and a step of etching the laser absorption layer. It is characterized by that. [Selection] Figure 1
priorityDate 2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009130243-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085050-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863
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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708

Total number of triples: 22.