http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012199271-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
filingDate | 2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c95fb7bf621b69f7df810b570b4f5533 |
publicationDate | 2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012199271-A |
titleOfInvention | Manufacturing method of semiconductor device |
abstract | An object of the present invention is to provide a method of manufacturing a semiconductor device capable of preventing mutual diffusion of a low melting point metal and Si of a Si substrate on the back surface of the Si substrate while forming a silicide layer on the surface of the Si substrate. And A method of manufacturing a semiconductor device according to the present invention includes a step of forming a low melting point metal on the back surface of a Si substrate, a step of forming a refractory metal layer on the surface of the Si substrate, and the refractory metal. Forming a laser absorption layer on the layer; and irradiating the laser absorption layer with laser light to lower the temperature of the low melting point metal so as to prevent mutual diffusion between the low melting point metal and Si of the Si substrate. A step of forming a silicide layer at an interface between the laser absorption layer and the refractory metal layer and an interface between the refractory metal layer and the Si substrate, and a step of etching the laser absorption layer. It is characterized by that. [Selection] Figure 1 |
priorityDate | 2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.