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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
filingDate 2012-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81de7e8e6934190d2362219de4b024ca
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publicationDate 2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012198250-A
titleOfInvention Semiconductor sensor
abstract An object of the present invention is to make available a semiconductor sensor for determining the physical and / or chemical properties of a medium that produces a stable and reproducible signal based on a semiconductor with a large band gap. It is. The present invention relates to a semiconductor sensor for determining the physical and / or chemical properties of a medium. The semiconductor sensor 1 according to the present invention includes an electronic element 3 having a sensitive surface, and the electronic element 3 is partially formed on the basis of a semiconductor (wide gap semiconductor) having a large band gap. At least one region of the sensitive surface is provided with a functional layer array 4 having an ion sensitive surface. The functional layer array 4 includes a plurality of layers, and at least one of the plurality of layers is impermeable to the ions to be determined, and at least one other layer to the ions to be determined. And partially permeable. [Selection] Figure 2
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priorityDate 2005-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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