| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14e0bcf4580ad61483ae6fa666e238db |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-2366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-2255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-2308 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-705
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-0818
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0738 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F- |
| filingDate |
2012-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98f9597d6587443a2990913df3add380
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f43f6e304ada7c47486fd0835db99bdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_279e47e99a5f1bb89db2e0533d6726a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57e8271b5d7277ba682c9738d6e663f2 |
| publicationDate |
2012-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012191221-A |
| titleOfInvention |
Optical system for annealing polysilicon thin film by laser. |
| abstract |
A gas discharge laser crystallization apparatus is provided for performing transformation of orientation or crystal growth in a thin film of a workpiece. The laser system is configured as a POPA laser system and is operated to direct a first output laser light pulse beam from a first laser PO unit to a second laser PA unit, and a first laser output. And a timing and control module for synchronizing the timing of gas discharge generation in the first and second laser units within a pulse or −3 nsec so as to generate a second laser output optical pulse beam as an expansion of the optical pulse beam. The transmitter laser unit has a divergence controller. The divergence controller has an unstable oscillation controller. A beam pointing control mechanism and a beam position control mechanism are further provided between the laser and the workpiece. [Selection] Figure 6 |
| priorityDate |
2003-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |