http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012186267-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate | 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97cf5f5b970495ec2740b4829eefdff3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b521bb939ec938999b64a68426460e9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e53fd8980f66ae90bf15b9e82a51f59e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fa0fb83d8f461414f80f80d0054c8bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0c138a78f2033b0da139a4ed2704110 |
| publicationDate | 2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012186267-A |
| titleOfInvention | Epitaxial substrate |
| abstract | Provided is an epitaxial substrate that uses a silicon substrate as a base substrate and is suppressed in warpage to an extent that there is no problem as compared with the substrate size, and is suitable for manufacturing a semiconductor element. An epitaxial substrate includes a base substrate made of a silicon single crystal, and a group III nitride layer group made of a plurality of group III nitride layers formed on the base substrate. The base substrate 1 has p-type conductivity by adding boron, has a specific resistance of 0.01 Ω · cm to 0.1 Ω · cm, and includes a plurality of III Group nitride layers 2, 3 and 4 each contain at least Al or Ga, the amount of warpage of the epitaxial substrate is SR (unit: μm), the total film thickness of the nitride layer group is te (unit: μm), the base substrate When the film thickness of 1 is ts (unit: mm) and the diameter of the base substrate 1 is ds (unit: mm), the normalized warpage index K is K = {(SR / te) × (ts / ds) 2 } The relational expression of ≦ 1 × 10 −3 is satisfied. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015002329-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016009762-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997612-B2 |
| priorityDate | 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.