| abstract |
An oxide sintered body suitably used for manufacturing an oxide semiconductor film for a display device, having high conductivity and relative density, and forming an oxide semiconductor film having high carrier mobility A possible oxide sintered body is provided. An oxide sintered body of the present invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and indium oxide powders. X-ray diffraction was performed on the ligation, and the intensity of the XRD peak near 2θ = 34 ° was A, the intensity of the XRD peak near 2θ = 31 ° was B, and the intensity of the XRD peak near 2θ = 35 ° was C, 2θ = 26. When the intensity of the XRD peak near 5 ° is represented by D, the following formula (1) is satisfied. 70> [A / (A + B + C + D)] × 100 ≧ 10 (1) [Selection figure] None |