http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012178490-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2011-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93d68914c360162287a7a53193c7b3d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec23b784eb9cd35c4170542afbf87d29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_655a423d2a57559acbb18f84cb1a22b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfc1214c28815a14e6cae6fc73448b50 |
| publicationDate | 2012-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012178490-A |
| titleOfInvention | Substrate processing apparatus, gas nozzle, and method for manufacturing substrate or semiconductor device |
| abstract | The yield is improved without closing the gas supply port of the gas nozzle. A reaction tube (manifold) that processes (heat-treats) a plurality of laminated wafers, a heating body that heats the inside of the reaction tube, and a lamination of each wafer are provided in the reaction tube. A plurality of first gas supply nozzles 60 extending in the direction, and a plurality of gas supply films 60 are provided side by side from the base end portion 60 a to the tip end portion 60 b of the first gas supply nozzle 60, and toward each wafer 14. And a first gas supply port 68 that supplies a Cl atom-containing gas (etching gas), and a rectifying plate 61 that is provided at the distal end portion 60b of the first gas supply nozzle 60 and extends in the gas supply direction. As a result, the concentration reduction of the etching gas in the vicinity of the uppermost first gas supply port 68 can be suppressed, and the first gas supply port 68 is not blocked, so that the yield can be improved. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103451621-A |
| priorityDate | 2011-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.