Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21K2207-005 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21K1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-18 |
filingDate |
2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5776954c479d3c1b409c78897757d595 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92e3a924d5e4a009f69c97299d441b85 |
publicationDate |
2012-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2012168397-A |
titleOfInvention |
MICROSTRUCTURE, MANUFACTURING METHOD THEREOF, AND IMAGING DEVICE |
abstract |
A method for manufacturing a fine structure with a narrow pitch and a high aspect ratio in which pitch deviation is suppressed is provided. A first insulating layer is provided at least on the top of a protrusion formed by etching silicon, and the following chemical formula (1) and chemical formula (2) (R 1 , R 2 , R 3 is a second insulating layer having an organopolysiloxane containing a group represented by an alkyl group) to form a seed layer having a metal at the bottom of the recess, and the recess is filled with metal by electroplating And a manufacturing method of a fine structure which forms a plating layer. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015034306-A |
priorityDate |
2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |