http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012163983-A

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filingDate 2012-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012163983-A
titleOfInvention Semiconductor device
abstract In a semiconductor device in which a pixel electrode and a gate wiring are formed on the same interlayer film, liquid crystal burn-in and characteristic deterioration are reduced without adding the number of masks. By providing an insulating film over the gate wiring, the absolute value of the gate voltage applied to the liquid crystal during a period when the gate wiring is not selected can be reduced. When the insulating film is formed of a light shielding resin film and a columnar spacer, an increase in the number of masks can be suppressed. Further, by forming a pixel electrode on the insulating film so that the gate wiring and the pixel electrode overlap with each other, the gate voltage applied to the liquid crystal can be reduced by the electric field shielding effect of the pixel electrode. [Selection] Figure 1
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Total number of triples: 25.