http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012160716-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2012-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012160716-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object of the present invention is to provide a semiconductor device in which oxygen is prevented from being released from the side surface of an oxide semiconductor layer, defects (oxygen vacancies) in the oxide semiconductor layer are sufficiently small, and leakage current between a source and a drain is suppressed. To do. An oxide semiconductor layer is formed by performing first heat treatment on an oxide semiconductor film and then processing the oxide semiconductor film, and immediately after that, the sidewall of the oxide semiconductor layer is insulative. By covering with oxide and applying the second heat treatment, the side surface of the oxide semiconductor layer is prevented from being exposed to vacuum, and a semiconductor device is manufactured with fewer defects (oxygen vacancies) in the oxide semiconductor layer. To do. A sidewall of the oxide semiconductor layer is covered with a sidewall insulating layer. Note that the semiconductor device has a TGBC (Top Gate Bottom Contact) structure. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015079946-A |
| priorityDate | 2011-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.