| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 |
| filingDate |
2011-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dc81562720e6aa72d6de3da3341329f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5743414a7629bf6775e096dc1ea400d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f586210c0c925f74d275b51fed70e4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8db0eefbee70f0eefc7949ba6cbbbf3f |
| publicationDate |
2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012160394-A |
| titleOfInvention |
Method for manufacturing oxide semiconductor layer |
| abstract |
Even when a support including a resin film base is used, heat treatment is performed on an oxide semiconductor layer formed on the support in a high temperature range in which the resin film base is altered or deformed. Provided is a method for manufacturing an oxide semiconductor layer. The traveling film substrate is sequentially subjected to coating liquid application, drying / firing treatment, calendar treatment, and electromagnetic wave treatment. In the electromagnetic wave treatment in the electromagnetic wave irradiation unit 40, the metal oxide semiconductor porous layer 33 formed on the film base material 16 is heated by electromagnetic wave irradiation, and the film base material 16 is cooled by the cooling roll 36. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112853266-A |
| priorityDate |
2011-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |