http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012156429-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3598030cb79ce8e5f53140313b8f816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
filingDate 2011-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95a85c539f3fa46bf480c7ace1437d42
publicationDate 2012-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012156429-A
titleOfInvention Aluminum carbide thin film, semiconductor substrate on which aluminum carbide thin film is formed, and manufacturing method thereof
abstract Disclosed are a crystalline aluminum carbide thin film, a semiconductor substrate on which a crystalline aluminum carbide thin film is formed, and a method for manufacturing the same. According to the present invention, there is provided an aluminum carbide thin film characterized by containing aluminum carbide crystals. According to another aspect of the present invention, an aluminum carbide thin film is manufactured by supplying a gas containing carbon and a gas containing aluminum to grow an aluminum carbide crystal on a substrate to form an aluminum carbide thin film. A method is provided. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020077749-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7177437-B2
priorityDate 2011-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010258397-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011034011-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010508661-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10203896-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010222186-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005210095-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0778776-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007103898-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID455728551
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16682925
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452894838
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457160489
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268

Total number of triples: 45.