http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012140329-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9a255559e1d94f20510a17a673b1078 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B9-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B9-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate | 2012-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6eda01d6acb2a47ce83acfd16aabed0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_888de450b427d0fa9ffdade4e1c9cf65 |
| publicationDate | 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012140329-A |
| titleOfInvention | Crystal growth equipment |
| abstract | A crystal growth apparatus for growing a group III nitride crystal by controlling a mixing ratio, gas pressure and temperature. Pressure / temperature correlation diagrams PT1 to PT3 are determined corresponding to mixing ratios r = 0.4, 0.7, and 0.95, respectively, which indicate the amount ratio of metal Na and metal Ga. The pressure / temperature correlation diagrams PT1 to PT3 show a region in which a GaN crystal is dissolved (regions REG11, REG21, REG31), a region in which a GaN crystal is grown from a seed crystal (regions REG12, REG22, REG32), and columnar GaN. It includes regions for growing crystals (regions REG13, REG23, REG33) and regions for growing plate-shaped GaN crystals (regions REG14, REG24, REG34). The mixing ratio r is determined in a range of a plurality of mixing ratios, and a GAN crystal is grown using a desired pressure and temperature included in a pressure / temperature correlation diagram corresponding to the determined mixing ratio. [Selection] Figure 4 |
| priorityDate | 2012-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.