http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012134357-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08
filingDate 2010-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfd4d0ab397c215a0bf757ebff43c9de
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publicationDate 2012-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012134357-A
titleOfInvention Cleaning liquid for CMP polishing liquid, cleaning method using the same, and semiconductor substrate manufacturing method using the same
abstract PROBLEM TO BE SOLVED: To provide a cleaning liquid for CMP polishing liquid capable of suppressing a decrease in polishing rate and suppressing generation of polishing flaws, a cleaning process using the same, and a semiconductor substrate manufacturing method using the same. A cleaning liquid for a CMP polishing liquid, which is a cleaning liquid for cleaning a CMP polishing liquid supply apparatus and contains a strong acid. The strong acid contained in the cleaning liquid for CMP polishing liquid is preferably at least one compound selected from sulfuric acid, oxalic acid, hypochlorous acid, hydrofluoric acid, nitric acid, and hydrochloric acid. [Selection figure] None
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190127775-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11046910-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014079820-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018180256-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015182756-A1
priorityDate 2010-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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