| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1923e3aa507cd4831f336fb03f689b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cd812480f3d63636b047bea9869968c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c9b13ef0dcb14801e6fb28eadacfd23 |
| publicationDate |
2012-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012134242-A |
| titleOfInvention |
Manufacturing method of SOI wafer |
| abstract |
A method for manufacturing an SOI wafer having a desired SOI layer thickness by performing epitaxial growth on an SOI wafer without a silicon oxide film on a terrace portion manufactured by ion implantation and peeling without causing a valley-shaped step. An object of the present invention is to provide a process for removing an outer peripheral portion of a buried oxide film so that an outer peripheral edge of an SOI layer of the SOI wafer is positioned outside the outer peripheral edge of the buried oxide film. After that, after heat-treating the SOI wafer in a reducing atmosphere containing hydrogen or in an atmosphere containing hydrogen chloride gas, an SOI wafer manufacturing method for forming an epitaxial layer on the surface of the SOI layer. [Selection] Figure 1 |
| priorityDate |
2010-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |