| abstract |
In order to stably form a high-precision fine pattern for manufacturing a highly integrated and high-precision electronic device, a film having a thickness of 200 nm or more is formed from a chemically amplified resist composition. In a pattern forming method for exposing and developing a negative pattern forming method, which improves film detachability, reduces residues on the substrate generated after development, and reduces residual defects and is excellent in resolution, and Provided is a resist pattern formed by a negative pattern forming method. (A) (A) a resin whose polarity is increased by the action of an acid and whose solubility in a developer containing an organic solvent is reduced; and (B) a compound that generates an acid upon irradiation with actinic rays or radiation. (C) a step of forming a film having a film thickness of 200 nm or more with a chemically amplified resist composition containing a solvent, (a) a step of exposing the film, and (c) an organic layer of the exposed film. A negative pattern forming method comprising: developing with a developer containing a solvent. [Selection figure] None |