| abstract |
A method for electrochemical etching of a semiconductor capable of improving the metal adhesion of the semiconductor is provided. A) a semiconductor wafer having a front surface, a back surface, and a PN junction having an oxide emitter layer; b) the semiconductor wafer comprising one or more bifluoride sources, one or more fluoride salts, or mixtures thereof; Contacting a composition containing the above metal ion source, c) generating a current in the composition, d) applying an anode current for a predetermined time, and subsequently cutting off the anode current for a predetermined time. Repeating this cycle until nanopores are formed in the oxidized emitter layer of the semiconductor wafer, and e) applying cathode current and light so that metal is deposited on the nanopore layer, [Selection figure] None |