http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012124367-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33cf281df1fdf76b7da1bb88a75ba80d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2be5226697daccdc82e53787710816aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aba4e74ac10b849c6fe4f9f9d237a12 |
| publicationDate | 2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012124367-A |
| titleOfInvention | Oxide insulating film, oxide semiconductor thin film transistor element, and manufacturing method thereof |
| abstract | An oxide insulating film having a specific resistance higher by two digits or more can be provided, and an oxide semiconductor material containing an appropriate amount of oxygen atoms is oxidized into an oxide layer containing an appropriate amount of carbon atoms in addition to oxygen atoms. An oxide semiconductor thin film transistor element using a material insulating layer material for a gate insulating layer, a channel protective layer, and a passivation layer, and a method for manufacturing the same are obtained. An oxide insulating film is formed by adding carbon atoms in addition to oxygen atoms in an oxide semiconductor layer. The oxide semiconductor thin film transistor element according to the present invention is an oxide semiconductor thin film transistor element in which an oxide material is used for a channel semiconductor layer, and the oxide insulating film includes an oxide material used for the channel semiconductor layer. The same material is used for any or all of the gate insulating layer, channel protective layer, and passivation layer. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9508866-B1 |
| priorityDate | 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID456171974 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457623688 |
Total number of triples: 22.