http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012119474-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5542e2fc7464fc8b1747168208498f9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e76566a9d9718bbda1ee96c4e88791f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_459f2542c63ac36f8ee77effcb3676ac |
| publicationDate | 2012-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012119474-A |
| titleOfInvention | Thin film transistor and manufacturing method thereof |
| abstract | The present invention provides a thin film transistor having excellent semiconductor characteristics and a method for manufacturing the same. A thin film transistor of the present invention includes a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode on a base material, the gate insulating film is a layer containing silicon oxide, and the gate In the positive ion spectrum obtained by time-of-flight secondary ion mass spectrometry on the surface of the insulating film, the peak intensity ratio (Ar / Si) of argon and silicon is 2.3 × 10 −5 or more. The method of the present invention for manufacturing a thin film transistor includes depositing the gate insulating film by sputtering of silicon oxide in an argon atmosphere at a pressure of 1.00 × 10 −3 Torr or less. [Selection] Figure 1 |
| priorityDate | 2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.