| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-024 |
| filingDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51f0993efd3582f6ff0ea83f7f7078ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd2272d1b94023f30183de53a393626e |
| publicationDate |
2012-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012119409-A |
| titleOfInvention |
Semiconductor device, semiconductor optical device, and semiconductor integrated device |
| abstract |
A semiconductor device and a semiconductor optical device capable of quickly discharging heat generated inside the device when the device is driven to the outside, and suppressing an increase in cost and power consumption for the operation. An element and a semiconductor integrated device are provided. For example, electrons and holes are recombined in a region of an active layer 11 formed on an n-type semiconductor substrate 13 between a p-type semiconductor layer 17 and an n-type semiconductor layer (n-type semiconductor substrate) 12. In the semiconductor laser that operates as described above, the tunnel junction layer 16 is formed above the region of the active layer 11 where electrons and holes recombine, and the upper surface of the semiconductor element (semiconductor laser) is used as a heat dissipation surface. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11639894-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9722144-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7155723-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9557215-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019507320-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016092175-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018146857-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021051078-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022091803-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020021883-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11280728-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10876965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015023819-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10883933-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10205046-B2 |
| priorityDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |