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filingDate 2011-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a94506cf9158f5447718171493c4b402
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publicationDate 2012-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012114417-A
titleOfInvention Thermoelectric conversion element
abstract Compared to conventional n-type oxide semiconductors mainly composed of zinc oxide, n-type oxide semiconductors exhibiting higher thermoelectric conversion characteristics and having high heat resistance and having zinc oxide as a main component ( n-type thermoelectric conversion element). A surface of a base 11 mainly composed of zinc oxide is covered with a coating portion 12 made of a metal oxide so as to suppress reoxidation of zinc oxide constituting the base, and the metal oxide is coated with the metal oxide. Metal oxides of metal elements having a valence of either tetravalent, pentavalent, hexavalent, or hexavalent among transition metal elements of Group 4A, Group 5A, Group 6A and Group 4B of the periodic table And [Selection] Figure 1
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