http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012113134-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-015
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filingDate 2010-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7218fd76d7118547a76ab1b633ff1da
publicationDate 2012-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012113134-A
titleOfInvention Surface emitting semiconductor laser device and optical transmission device
abstract A surface-emitting type semiconductor laser device with an optical modulator that is small and easy to manufacture is provided. A surface emitting semiconductor laser device 10 includes a VCSEL 10A and an optical modulator 10B. The VCSEL 10A includes a GaAs substrate 100, an n-type lower DBR 102 formed on the substrate, an active region 104, a current confinement layer 108, a p-type upper DBR 106, and an annular p-side electrode 110. The optical modulator 10B is formed on the upper DBR 106 and is optically transparent to the oscillation wavelength. The p-type first transparent semiconductor film 120 is formed on the first transparent semiconductor film 120 and has an oscillation wavelength. The second transparent semiconductor film 122 that is optically transparent to the second transparent semiconductor film 122 and the modulation electrode 130 that is electrically connected to the second transparent semiconductor film 122 are included. The p-type electrode 110 is also electrically connected to the first transparent semiconductor film 120. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140135014-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102037813-B1
priorityDate 2010-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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