| abstract |
An ultra-low dielectric constant (k) film having a dielectric constant of 2.7 or less and improved mechanical properties such as improvement in elastic coefficient and hardness, and a method for producing the film are provided. A multiphase ultra-low-k dielectric film includes atoms of Si, C, O, and H, has a dielectric constant of about 2.4 or less, has nano-sized pores or voids, and has an elastic modulus. Is about 5 or more and the hardness is about 0.7 or more. A preferred multi-phase ultra-low k dielectric film 44 contains atoms of Si, C, O, and H, has a dielectric constant of about 2.2 or less, has nano-sized pores or voids, and has an elastic modulus of about 3 or more, and the hardness is about 0.3 or more. [Selection] Figure 5 |