http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012109310-A

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filingDate 2010-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012109310-A
titleOfInvention Epitaxial wafer manufacturing method and epitaxial wafer
abstract An epitaxial wafer manufacturing method capable of obtaining high flatness of the back surface without polishing the front and back surfaces of the epitaxial wafer after the formation of the epitaxial film. A method of manufacturing an epitaxial wafer 100 according to the present invention includes a semiconductor wafer 10 having a chamfered portion 11 formed at an end and edges 12a and 13b which are boundaries between the chamfered portion 11 on both sides 12a and 12b. A step of rolling off the outer peripheral portion 14 of the one surface 12b from the inner predetermined position P of the edge 13b position on the one surface 12b side to the outer side of the wafer to make the outer peripheral portion 14 a roll-off region, and the one surface 12b And a step of forming the first epitaxial film 20 on the opposite other surface 12a. [Selection] Figure 1
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