| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1229111a198f86af4112ecd730b55cd9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-3595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-3568 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-3563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-6489 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate |
2011-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bd26ead4af200a420031bd0b5db4eb2 |
| publicationDate |
2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012102009-A |
| titleOfInvention |
Method for measuring impurities in silicon |
| abstract |
Method for measuring impurity concentration in silicon by float zone method to enable measurement of impurities in silicon to be investigated using photoluminescence and / or FTIR I will provide a. A single crystal rod is made by pulling a zone from the silicon to be investigated, and the single crystal rod is made of a single crystal or polycrystalline having a prescribed carbon concentration and dopant concentration in at least one dilution step. A silicon single crystal rod introduced into a silicon sleeve and diluted from the rod and sleeve by zone pulling is created, and the silicon to be investigated based on the diluted single crystal rod This is solved by a method for measuring impurities in silicon, in which the measurement of impurities in silicon is performed using photoluminescence and / or FTIR. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019035343-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017186216-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016108159-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019036661-A |
| priorityDate |
2010-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |