http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012101998-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aaf1107d7087ef613c3edc93ec018623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d031aac0deb9aa4a6cd6cd8d71aeda23 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D21-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00159 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2221-14 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-037 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-033 |
| filingDate | 2010-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28771fafadd3bb8e4b80bcc69db90468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52e737449c94b7e3651c8d7984f96b91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa8b2721cc56aa741d767cbe15586cc3 |
| publicationDate | 2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012101998-A |
| titleOfInvention | High purity silicon fine powder production equipment |
| abstract | An object of the present invention is to provide a silicon manufacturing apparatus capable of obtaining a high-purity silicon with fineness and fineness with minimum energy and high efficiency. In the apparatus for producing high-purity silicon fine particles, (1) a mechanism for heating and evaporating metallic zinc above the boiling point of zinc and heating the generated gas to supply zinc gas at 1000 ° C. or higher (2 ) A mechanism for supplying liquid silicon tetrachloride into the zinc gas; (3) a mechanism for mixing and reacting the zinc gas and the silicon tetrachloride to produce a reaction gas containing silicon particles; and (4) A mechanism for agglomerating and growing silicon particles generated in the gas by lowering the temperature of the reaction gas to 1000 ° C. or less; and (5) an aqueous solution in which a gaseous substance containing the grown silicon particles in the reaction gas is brought into contact with a zinc chloride aqueous solution. An apparatus for producing high-purity silicon fine particles, comprising a precipitation collection mechanism for precipitating and collecting silicon therein. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210071110-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150019642-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170018350-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016015299-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101640286-B1 |
| priorityDate | 2010-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.