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publicationDate 2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012079979-A
titleOfInvention Solid-state imaging device, manufacturing method thereof, and electronic apparatus
abstract An image quality of a captured image is improved. In a semiconductor layer 101, a photodiode 21 receives incident light H and generates a signal charge. In the semiconductor layer 101, on the other surface side opposite to the one surface on which the incident light H is incident, infrared light transmitted through the photodiode 21 in the incident light H is converted into infrared light. Absorbing part 31 absorbs. [Selection] Figure 3
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