http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012074623-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J201-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eba7d9f6974526c62bbf50a00e6eebab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4a14e155cb1c4f6aa8cd86a247b11c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d060fc3e196c5940134687125b21ea2a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_644d8de44a4886fe996c13bc64e4130a |
| publicationDate | 2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012074623-A |
| titleOfInvention | Adhesive film for semiconductor processing and method for manufacturing semiconductor chip package |
| abstract | When backgrinding a wafer with a bump electrode, it is possible to suppress damage and deformation of the bump electrode without causing peeling, and after backgrinding, only the adhesive layer is left and the substrate portion is peeled off. Provided is an adhesive film for semiconductor processing that can be peeled off with a low load without adhesive residue. Moreover, the manufacturing method of the semiconductor chip mounting body excellent in joining reliability using this adhesive film for semiconductor processing is provided. An adhesive film for semiconductor processing that holds a wafer with a protruding electrode during backgrinding of the wafer with a protruding electrode and functions as an adhesive when mounting a semiconductor chip with a protruding electrode. The electrode protective layer and the adhesive layer are laminated in this order, and after being bonded to the wafer with protruding electrodes, a peel test was performed under the conditions of 25 ° C., a pulling angle of 180 °, and a pulling speed of 300 mm / min. Interface peeling occurs between the electrode protective layer and the adhesive layer, no adhesive residue is observed in either the electrode protective layer or the adhesive layer, and the peel strength is 5 to 400 gf / The adhesive film for semiconductor processing which is 25 mm. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108140570-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741598-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016033158-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483148-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017079233-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017069102-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108140585-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108140585-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015162808-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019532165-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014172932-A |
| priorityDate | 2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 115.