http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012073553-A

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filingDate 2010-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012073553-A
titleOfInvention Photomask defect correction method, photomask manufacturing method, photomask, and pattern transfer method
abstract A defect correcting method capable of accurately correcting a defect generated in a fine pattern that is difficult to be corrected by a correcting device. A photomask defect in which a surplus defect generated in a photomask having a light-transmitting part and a light-shielding part formed by patterning a light-shielding film formed on a transparent substrate is corrected by using a defect correction apparatus. It is a correction method. A film removing step of simultaneously removing a surplus defect in the light transmitting portion and a part of the light shielding film of the light shielding portion adjacent to the light transmitting portion having the surplus defect, and a light shielding in the light shielding portion removed in the film removing step Forming a correction film having a light-shielding property equivalent to that of the light-shielding film in a region including a part of the film, and the film formation performed in the film formation process is performed by a single correction operation by the defect correction device This is performed for the light-shielding portion having a width larger than the minimum film formation width that can be formed by the above. [Selection] Figure 3
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