http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012064834-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-16 |
filingDate | 2010-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8489bf1ca0e22080654205f70dc31199 |
publicationDate | 2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012064834-A |
titleOfInvention | Silicon epitaxial wafer manufacturing system and silicon epitaxial wafer manufacturing method |
abstract | A silicon epitaxial wafer manufacturing system and a silicon epitaxial wafer manufacturing method capable of supplying a certain amount of silicon source gas to a reaction chamber of a silicon epitaxial growth apparatus are provided. SOLUTION: A plurality of concentration value measuring devices 18a and 18b for constantly measuring a concentration value of silicon source gas in a raw material mixed gas generated by a raw material mixed gas supply device 1, and calculation from the concentration value or the concentration value A transmission means 17 for transmitting the corrected value to each of the silicon epitaxial growth apparatuses 11, 12, and 13 as a digital signal, and a reaction chamber 11c in each of the silicon epitaxial growth apparatuses 11, 12, and 13 based on the concentration value or the correction value. , 12c, 13c, the silicon epitaxial wafer manufacturing system 10 is provided with flow rate control devices 14, 15, 16 for correcting the amount of the raw material mixed gas supplied as needed. [Selection] Figure 1 |
priorityDate | 2010-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.