| abstract |
The present invention provides a semiconductor device including a contact formation method in which connection failure is suppressed. A semiconductor device includes a first circuit region including a wiring layer, an insulating film formed on the first circuit region, and a second circuit formed on the insulating film and including a silicide film. A region, a lower contact provided on the wiring layer and electrically connected to the wiring layer, and an upper contact provided on the lower contact and electrically connecting the lower contact and the silicide film. [Selection] Figure 8 |