http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012059776-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 2010-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75528338b1ba5fe99eade85981f0ed9f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80f550999c284f89af277ff093734fdf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4fc810bf1d3a4af17a08d4d7c9070b0 |
| publicationDate | 2012-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012059776-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | An object of the present invention is to accurately perform ion implantation into a high breakdown voltage transistor without increasing the number of steps. [Solution] The first portion (H1 ′) of the mask material (M1) located immediately above the first region (R1 ′) where the gate electrode of the first transistor (Tr1) is to be formed in the first element formation region (AA1). The mask material (M1) is left in the first element formation region (AA1) other than the first portion (H1 ′). On the other hand, in the second element formation region (AA2), at least the second portion (H1) of the mask material positioned immediately above the second region (R1) where the gate electrode of the second transistor (Tr2) is to be formed, At least the third portion (H2, H3) of the mask material located immediately above the third region (R2, R3) where the source / drain diffusion region of the second transistor (Tr1) should be formed is removed. Form an opening. [Selection] Figure 2C |
| priorityDate | 2010-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.