http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012056842-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95585944cd76ddfb6dc33ed2a0b84403 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-453 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
filingDate | 2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f44f6149fc390cb6d76007cb332729c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6af38d38e6a7564993c51aa668a979ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec5c8d4f3e02ae507d8490d1dbb1f865 |
publicationDate | 2012-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012056842-A |
titleOfInvention | In-Ga-Zn-based oxide, oxide sintered body, and sputtering target |
abstract | Disclosed is an oxide having a novel crystal form, which can be suitably used as a target or the like used for manufacturing an oxide thin film. Indium element (In), gallium element (Ga), and zinc element (Zn), By X-ray diffraction measurement (Cukα ray), the incident angle (2θ) is 7.0 ° to 8.4 °, 30.6 ° to 32.0 °, 33.8 ° to 35.8 °, 53.5 Diffraction peaks are observed at each of the positions of 5 ° to 56.5 ° and 56.5 ° to 59.5 °, One of the diffraction peaks observed at positions where 2θ is 30.6 ° to 32.0 ° and 33.8 ° to 35.8 ° is a main peak, and the other is a sub peak. [Selection] Figure 1 |
priorityDate | 2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.