http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012054540-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbab03ab580c0cdb5a18689edeca87ec |
| publicationDate | 2012-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012054540-A |
| titleOfInvention | Method for manufacturing semiconductor substrate |
| abstract | An object is to provide a method for manufacturing an SOI substrate in which a semiconductor layer can be transferred from a single crystal semiconductor substrate to a base substrate at a low heat treatment temperature without increasing the irradiation amount of accelerated hydrogen ions. The present invention focuses on hydrogen that diffuses from the embrittled region to the surface side of the semiconductor substrate without contributing to cleavage. Then, a cap film that prevents diffusion of hydrogen from the embrittled region and can supply hydrogen to the region sandwiched between the embrittled region and the surface of the semiconductor substrate is formed on the semiconductor substrate, and the semiconductor layer is formed from the semiconductor substrate to the base substrate. The present invention has been reprinted. In particular, the hydrogen concentration of the cap film formed on the semiconductor substrate may be higher than the irradiation amount of hydrogen ions. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7275438-B2 |
| priorityDate | 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.