http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012033957-A

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filingDate 2011-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80dbc726f65702c876911ca1b20c3593
publicationDate 2012-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012033957-A
titleOfInvention Magnetoresistive element
abstract An object of the present invention is to increase a magnetic resistance and an output voltage as compared with a conventional TMR element. A magnetoresistive element is an Fe-based alloy having a BCC structure, and is made of a single crystal having a (001) crystal plane preferentially oriented or a polycrystal having a (001) crystal face preferentially oriented. A first ferromagnetic layer made of an Fe-based alloy having a BCC structure and having a (001) crystal plane preferentially oriented or a polycrystal having a (001) crystal face preferentially oriented; A tunnel barrier layer positioned between the ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is a single crystal MgO having a (001) crystal plane preferentially oriented or (001) The tunnel barrier height φ of the single crystal MgO in which the (001) crystal plane is preferentially oriented or the polycrystalline MgO in which the (001) crystal plane is preferentially oriented is 0.2 to To be 0.5 eV There is a butterfly. [Selection] Figure 11
priorityDate 2004-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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