Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03b044ff8bb4c740400b1deaa22d5c3e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N59-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16 |
filingDate |
2011-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80dbc726f65702c876911ca1b20c3593 |
publicationDate |
2012-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2012033957-A |
titleOfInvention |
Magnetoresistive element |
abstract |
An object of the present invention is to increase a magnetic resistance and an output voltage as compared with a conventional TMR element. A magnetoresistive element is an Fe-based alloy having a BCC structure, and is made of a single crystal having a (001) crystal plane preferentially oriented or a polycrystal having a (001) crystal face preferentially oriented. A first ferromagnetic layer made of an Fe-based alloy having a BCC structure and having a (001) crystal plane preferentially oriented or a polycrystal having a (001) crystal face preferentially oriented; A tunnel barrier layer positioned between the ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is a single crystal MgO having a (001) crystal plane preferentially oriented or (001) The tunnel barrier height φ of the single crystal MgO in which the (001) crystal plane is preferentially oriented or the polycrystalline MgO in which the (001) crystal plane is preferentially oriented is 0.2 to To be 0.5 eV There is a butterfly. [Selection] Figure 11 |
priorityDate |
2004-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |