| abstract |
Provided are a polymerizable monomer for resist suitable for fine processing performed in dry exposure, immersion exposure and double patterning processes, and a resist material and a pattern forming method using the same. A polymerizable monomer containing a repeating unit represented by any one of general formula (6), general formula (7), and general formula (8). (R 1 represents a hydrogen atom, a halogen atom, a methyl group or a trifluoromethyl group, R 2 represents a methyl group, an ethyl group or an isopropyl group, and A is taken together with the carbon atom to which it is bonded. A carbonyl group (C═O) or an acetal structure in which the carbonyl group is protected by a protecting group.) [Selection figure] None |