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publicationDate 2012-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012023339-A
titleOfInvention Manufacturing method of semiconductor device
abstract A method of manufacturing a semiconductor device having a cleaning process capable of reliably cleaning the inside of a trench to the bottom of the trench with low damage is provided. As a chemical solution 5 in a cleaning process after forming a trench 3, a mixed solution of hydrogen peroxide water, ammonia water and water to which a chelating agent is added is used. As a result, it is possible to reliably perform cleaning up to the bottom of the trench 3 without applying an external force such as ultrasonic waves. Since such a cleaning process can be performed, even if the trench 3 having an aspect ratio of 5 or more is formed, the foreign matter including the protective film 4 can be reliably removed to the bottom of the trench 3. [Selection] Figure 1
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