| abstract |
A semiconductor layer formed on one substrate can be formed on the other substrate by attaching the substrates to each other with an insulating film interposed therebetween, and at this time, without damaging the crystal structure of the semiconductor layer. A semiconductor substrate, a field effect transistor, an integrated circuit, and a method for manufacturing a semiconductor substrate that can be easily manufactured while maintaining a high-quality crystal structure are proposed. In the MISFET 1, an oxide film 6 having a flat surface is formed on the III-V compound semiconductor layer 7 on the InP substrate 12 by using the ALD method, so that the oxide film 6 and the Si substrate are formed. 2 can be firmly bonded to each other by simply bonding them together at room temperature. Thus, the group III-V compound semiconductor layer 7 formed on one InP substrate 12 is bonded to the other Si substrate 2. And can be easily manufactured while maintaining high quality without damaging the crystal structure of the III-V compound semiconductor layer 7. [Selection] Figure 2 |