| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bfdf49224a405be1f7b653c56ebad94 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2010-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc82386b14853f52157e740541d67e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b47790e96f343a16ffab0eeea3508a11 |
| publicationDate |
2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012018983-A |
| titleOfInvention |
Etching solution and etching method of silicon nitride |
| abstract |
PROBLEM TO BE SOLVED: To etch silicon nitride by etching the silicon nitride by reducing the surface tension of the phosphoric acid-based etchant and to etch the nitride stably for a long period of time. provide. Silicon nitride is etched with an etching solution of silicon nitride containing phosphoric acid, water, and an alcohol having 2 to 6 carbon atoms. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018207108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102488515-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190080289-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10147619-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11186771-B2 |
| priorityDate |
2010-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |