http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012008546-A

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filingDate 2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf5420bfc1f1284cb1466d3a0c8e9e45
publicationDate 2012-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012008546-A
titleOfInvention Multi-tone photomask manufacturing method and pattern transfer method
abstract An object of the present invention is to improve the in-plane uniformity of the thinning rate of a resist pattern between dense and dense while reducing the number of drawing and developing by using the thinning of the resist pattern. A first resist that covers a formation region of a light-shielding portion and a formation region of a semi-translucent portion, and in which the thickness of the resist film in the formation region of the semi-transparent portion is smaller than the thickness of the resist film in the formation region of the light-shielding portion. A pattern forming step and a step of supplying active oxygen to the first resist pattern to reduce the thickness of the first resist pattern, and a part of the active oxygen supplied to the first resist pattern is exposed through the semi-transparent layer. It is consumed by the light film. [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016156857-A
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