http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012004230-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
filingDate | 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e7361f1d9d2dc6e3c54968867164eb9 |
publicationDate | 2012-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2012004230-A |
titleOfInvention | Manufacturing method of semiconductor device |
abstract | A manufacturing method capable of manufacturing a further miniaturized semiconductor device is provided. A step of providing a plurality of trenches for partitioning pillars in a semiconductor substrate, a buried silicon oxide film covering a first region where a bit line at the bottom of the trench is formed, and buried silicon A buried doped silicon film 110b embedded in the oxide film 109a; and a silicon nitride film 113 formed on the side surface of the second region, which is a region above the first region, A step of forming a groove 112c in which the buried silicon oxide film 109a is exposed in a part of the side surface of the region, a non-doped silicon film 114 is formed on the inner surface of the groove 112c, and a heat treatment is performed on the upper surface of the buried DOPOS film 110b. And forming a new buried doped silicon film 114a. [Selection] Figure 14 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8883596-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136358-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8633531-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011073939-A1 |
priorityDate | 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.