http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012004230-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
filingDate 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e7361f1d9d2dc6e3c54968867164eb9
publicationDate 2012-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012004230-A
titleOfInvention Manufacturing method of semiconductor device
abstract A manufacturing method capable of manufacturing a further miniaturized semiconductor device is provided. A step of providing a plurality of trenches for partitioning pillars in a semiconductor substrate, a buried silicon oxide film covering a first region where a bit line at the bottom of the trench is formed, and buried silicon A buried doped silicon film 110b embedded in the oxide film 109a; and a silicon nitride film 113 formed on the side surface of the second region, which is a region above the first region, A step of forming a groove 112c in which the buried silicon oxide film 109a is exposed in a part of the side surface of the region, a non-doped silicon film 114 is formed on the inner surface of the groove 112c, and a heat treatment is performed on the upper surface of the buried DOPOS film 110b. And forming a new buried doped silicon film 114a. [Selection] Figure 14
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priorityDate 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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