http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012004155-A

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filingDate 2010-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ee645d738c4e1ffe449b324e08e148a
publicationDate 2012-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012004155-A
titleOfInvention Semiconductor light emitting device manufacturing method, semiconductor light emitting device, lamp, electronic device, and mechanical device
abstract Provided is a semiconductor light-emitting element capable of preventing a decrease in crystallinity of a light-emitting layer and a decrease in crystallinity of a p-type semiconductor layer due to contamination of impurities in the p-type semiconductor layer, and obtaining a high output, and a method for manufacturing the same. To do. In a first metal organic chemical vapor deposition apparatus, a first n-type semiconductor layer 12a, a second n-type semiconductor layer 12b, a well layer and a barrier layer are alternately and repeatedly stacked on a substrate 11, In the first step of forming the light emitting layer 13 whose upper surface becomes the barrier layer, and in the second metal organic chemical vapor deposition apparatus, the regrowth layer 13c of the barrier layer is formed on the uppermost barrier layer of the light emitting layer; A method for manufacturing a semiconductor light emitting device is provided, comprising a second step of sequentially stacking the p-type semiconductor layer 14. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597293-A
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